Deposition of grid-like single-crystal Ce2O3 thin films on LaAlO3(100) substrate by pulsed laser deposition

Yurtcan M. T.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.32, sa.3, ss.3854-3862, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 32 Sayı: 3
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1007/s10854-020-05129-1
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.3854-3862
  • Atatürk Üniversitesi Adresli: Evet

Özet

Oxygen-deficient Ce2O3 growth requires reduction of CeO2 with hydrogen gas and high temperatures. In this study, a 2-year desiccated target with different oxygen-deficient phases was used as a pellet in order to deposit cerium oxide thin films on LaAlO3 substrates from 100 to 800 degrees C by pulsed laser deposition. Desiccated target utilization resulted in pure Ce2O3 and CeO2-Ce2O3 mixture thin films verified by X-ray diffraction. Morphology of the thin films was investigated by scanning electron microscope, and seen that Ce2O3 films have grid-like surface formation. A fresh target is prepared and used in order to compare the crystal structure of the desiccated target. Experiments repeated with a fresh target and X-ray photoelectron spectroscopy of cerium oxide films indicated that Ce2O3 growth depends on target stoichiometry. Further desiccation of the target resulted in single-crystal Ce2O3 growth in all temperatures between 100 and 800 degrees C, attributed to stoichiometric transfer of the target composition.