Akademik Veri Yönetim Sistemi
2nd International Congress on Semiconductor Materials and Devices (ICSMD), Ardahan, Türkiye, 28 - 30 Ağustos 2018, ss.66-72
In this study, Al/rGO/n-Si/Al heterojunction diode was fabricated by spin coating of reduced graphene oxide (rGO) solution on the n-type Si semiconductor wafer. The current-voltage (I-V) characteristics of the prepared diode were investigated at a wide temperature range. The I-V measurements showed a good rectifying behaviour at all temperature values. Also, the temperature dependence of the main junction parameters such as the ideality factory (n), the barrier height (Φb), reverse saturation current (I0) and series resistance (Rs) was determined from I-V measurements using different methods (Thermionic Emission and Norde functions). It was seen that the Φb and the I0 values of the diode increased with increasing temperature, while the n and the Rs values decreased. Rs and n values of the junction were found to be 0.28 Ω and 1. 6 at room temperature, respectively. Low values of Rs and n shows that the rGO/semiconductor junctions could be a good option for promising applications.