DNA-based organic-on-inorganic semiconductor Schottky structures

GULLU O., CANKAYA M., BARIŞ Ö., BIBER M., ÖZDEMİR H., GÜLLÜCE M., ...Daha Fazla

APPLIED SURFACE SCIENCE, cilt.254, sa.16, ss.5175-5180, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 254 Sayı: 16
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.apsusc.2008.02.019
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.5175-5180
  • Anahtar Kelimeler: Schottky barrier, organic-inorganic contact, DNA, organic semiconductor, BARRIER HEIGHT, ELECTRICAL-TRANSPORT, CURRENT-VOLTAGE, CONTACTS, SI, INHOMOGENEITIES, SURFACES, DIODES, SERIES, CHARGE
  • Atatürk Üniversitesi Adresli: Evet

Özet

A sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) at room temperature and in dark. The DNA-based structure has showed the rectifying behavior. From its optical absorbance spectrum, it has been seen that DNA has been a semiconductor-like material with wide optical band energy gap of 4.12 eV and resistivity of 1.6 x 10(10) Omega cm representing a p-type conductivity. (C) 2008 Elsevier B.V. All rights reserved.