High barrier Schottky diode with organic interlayer

Gullu O., AYDOĞAN Ş., TURUT A.

SOLID STATE COMMUNICATIONS, cilt.152, sa.5, ss.381-385, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 152 Sayı: 5
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.ssc.2011.12.007
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.381-385
  • Anahtar Kelimeler: Organic film, Schottky barrier, Ideality factor, CAPACITANCE-VOLTAGE CHARACTERISTICS, ELECTRICAL-PROPERTIES, HEIGHT ENHANCEMENT, CURRENT TRANSPORT, SI, CONTACTS, INP, INHOMOGENEITIES, JUNCTION, SEMICONDUCTORS
  • Atatürk Üniversitesi Adresli: Evet

Özet

A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and n-InP. By using capacitance-voltage measurement of the Cu/PSP/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current (I-sc) and open circuit voltage (V-oc) have been extracted as 0.33 mu A and 150 mV, respectively. (C) 2011 Elsevier Ltd. All rights reserved.