The annealing effect on structural, optical and photoelectrical properties of CuInS2/In2S3 films
PHYSICA B-CONDENSED MATTER, vol.406, pp.2953-2961, 2011 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 406
- Publication Date: 2011
- Doi Number: 10.1016/j.physb.2011.04.027
- Journal Name: PHYSICA B-CONDENSED MATTER
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.2953-2961
- Ataturk University Affiliated: Yes
Abstract
Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS2/In2S3 multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 degrees C for 30 min in nitrogen atmosphere and the annealing effect on structural, optical and photoelectrical properties of the film was investigated. X-ray diffraction (XRD) and optical absorption spectroscopy were used for structural and optical studies. Current-Voltage (I-V) measurements were performed in dark environment and under 15, 30 and 50 mW/cm(2) light intensity to investigate the photosensitivity of the structure. Also, the electrical resistivity of the film was determined in the temperature range of 300-470 K. It was found that annealing temperature drastically affects the structural, optical and photoelectrical properties of the CuInS2/In2S3 films. (C) 2011 Elsevier B.V. All rights reserved.