Lutentium incorporation influence on ZnO thin films coated via a sol–gel route: spin coating technique

Turgut, G.; Duman, S.; Ozcelik, F.; Gurbulak, Bekir; Dogan, S.

doi:10.1007/s10854-016-4399-3

Lutentium incorporation influence on ZnO thin films coated via a sol–gel route: spin coating technique

Atıf İçin Kopyala

Turgut G., Duman S., Ozcelik F. S., Gurbulak B., Dogan S.

Journal of Materials Science: Materials in Electronics, cilt.27, sa.5, ss.5089-5098, 2016 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 27 Sayı: 5
Basım Tarihi: 2016
Doi Numarası: 10.1007/s10854-016-4399-3
Dergi Adı: Journal of Materials Science: Materials in Electronics
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.5089-5098
Atatürk Üniversitesi Adresli: Evet

Özet

Pure and lutetium (Lu) incorporated zinc oxide (ZnO) thin films were deposited by a sol-gel route. The effect of Lu contribution on the properties of ZnO was examined in detail by means of XRD, AFM, SEM, UV-Vis spectrophotometer, and I-V measurements. The nano-sized ZnO:Lu samples had hexagonal wurtzite structure with c-axis (002) preferential orientation. The pure ZnO nano-particles homogeneously scattered on the film surface and this homogeneous particle distribution was deteriorated with Lu incorporation. Ohmic contacts to the ZnO:Lu films were formed using gold (Au) metallization schemes. As-deposited Au contacts exhibited linear current-voltage characteristics. The optical band gap for pure ZnO went up from 3.281 to 3.303 eV with low Lu contribution level up to 3 at.%, then it decreased with more Lu level. The Urbach energy was also studied and it was found that E-u depended on Lu incorporation level.