The effects of thermal annealing on the electrical characteristics of Au/n-InP/In diode

ÇAKICI T., SAĞLAM M., GÜZELDİR B.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.28, ss.121-126, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 28
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.mssp.2014.07.037
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.121-126
  • Anahtar Kelimeler: Schottky diode, InP, Thermal annealing, CURRENT-VOLTAGE CHARACTERISTICS, HOMOGENEOUS BARRIER HEIGHT, TEMPERATURE-DEPENDENCE, SCHOTTKY CONTACTS, STRUCTURAL-PROPERTIES, TRANSPORT MECHANISMS, PARAMETERS, DENSITY, STATES
  • Atatürk Üniversitesi Adresli: Evet

Özet

An Au/n-InP/In diode has been fabricated in the laboratory conditions and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode have been measured in room temperature. In order to observe the effect of the thermal annealing, this diode has been annealed at temperatures 100 and 200 degrees C for 3 min in N-2 atmosphere. The characteristic parameters such as leakage current, barrier height and ideality factor of this diode have been calculated from the forward bias I-V and reverse bias C-V characteristics as a function of annealing temperature. Also the rectifying ratio of the diode is evaluated for as-deposited and annealed diode. (C) 2014 Elsevier Ltd. All rights reserved,