Akademik Veri Yönetim Sistemi
SENSORS AND ACTUATORS A-PHYSICAL, cilt.390, 2025 (SCI-Expanded, Scopus)
The Si@PVA-MoS2:NiO heterojunction photodetector (HJPD) was successfully fabricated by electrospinning PVA-MoS2:NiO composite nanofibers (NFs) onto a n-Si. Structural and morphological analysis of nanofibers were performed by XRD and FESEM, respectively. It was found that the device gave rectification ratio as high as 5.91 x 0(4) in the dark. A comprehensive current-voltage (I-V) analysis of the device was carried out, focusing on the influence of the white light intensity. From the white light intensity-dependent measurements, it was revealed that the photoresponse was higher at higher intensities due to the interfacial photogating effect. Besides, I-V measurements under 365, 395, 590 and 850 nm light sources were also analyzed in detail. The device was found to exhibit very high performance under all the light sources mentioned. Specifically, responsivity (R) and specific detectivity (D*) of 372 mA/W and 6.69 x 10(11) Jones, respectively, were attained at 590 nm and 8 mW/cm(2) for the optimum value (at -2.0 V). Furthermore, the highest EQE value was calculated as 117 (%) at -2.0 V, under 365 nm UV light, while highest ON/OFF ratio was obtained as 2.14 x 10(4) for 590 nm, at zero bias. Besides, the device exhibits the normalized photocurrent to the dark current ratio (NPDR) of.40 x 10(8) W-1 (for zero bias), and the noise equivalent power (NEP) of 8.19 x 10(-14) WHz(-1/2) (for -2.0 V) under 590 nm yellow light. Furthermore, the Si@PVA-MoS2:NiO NFs HJPD heterojunction photodetector has shown remarkable stability, offering long-term reliability for practical applications.