The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si

CALDIRAN Z., DENIZ A. R., AYDOĞAN Ş., YESILDAG A., EKİNCİ D.

SUPERLATTICES AND MICROSTRUCTURES, cilt.56, ss.45-54, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 56
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.spmi.2012.12.004
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.45-54
  • Anahtar Kelimeler: Schottky barrier height, Anthracene, Organic film, Series resistance, CAPACITANCE-VOLTAGE CHARACTERISTICS, ELECTRICAL CHARACTERISTICS, DEPENDENCE, CONTACTS
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this work, an Au/Anthracene/n-Si/Al Schottky barrier diode was fabricated and it was found that the diode showed good rectification properties. The characteristic parameters of the device such as barrier height, ideality factor, interface states density and series resistance were determined from the current-voltage measurements. It was seen that the Anthracene organic layer increased the effective barrier height of the Au/n-Si/Al diode since this layer creates the physical barrier between the Au and n-Si. Furthermore, the current-voltage characteristics under forward bias were found to be ohmic due to conduction at lower voltage regions. At higher voltage regions there is space charge limited conduction (SCLC) mechanism. Furthermore, the capacitance-voltage curves of the Au/Anthracene/n-Si/Al Schottky barrier diode were analyzed in the various frequencies as a function of the bias. (C) 2012 Elsevier Ltd. All rights reserved.