Akademik Veri Yönetim Sistemi
IEEE Sensors Journal, 2026 (SCI-Expanded, Scopus)
In this work, we fabricated a PVP/SnS2 nanofibers (NFs)@n-Si heterojunction-based photodetector by loading SnS2 onto PVP nanofibers using the electrospinning technique and investigated its optoelectronic properties with the help of UV, IR and visible illumination. The heterojunction gave an extraordinary rectification ratio as high as 4.45×105 in the ±2V range in the dark. The PVP/SnS2 NFs@n-Si heterojunction device showed good photoresponse under UV, IR and visible light, and the photoresponse increased with changing white light intensity. Under 150 mW white light, the on/off ratio reached 1.55×106. The device has the highest responsivity and EQE of 1.97 A W-1 and 640 (%) (V= -2.0 V) for the UV light of 365 nm, respectively, while the highest D value is 4.82×1012 jones (at zero bias) for 590 nm. Even 85 days after device fabrication, the device’s rectifying ratio and photoresponse under all light sources were observed to be very high.