High-Performance UV-Visible-IR Photodetectors Based on PVP/SnS<sub>2</sub> Nanofiber@n-Si Heterojunctions: Unveiling the Role of Interface Dynamics and Morphology

Soltani Z., YILDIRIM F., Chenari H. M., AYDOĞAN Ş.

IEEE SENSORS JOURNAL, cilt.26, sa.6, ss.8340-8348, 2026 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 26 Sayı: 6
  • Basım Tarihi: 2026
  • Doi Numarası: 10.1109/jsen.2026.3660867
  • Dergi Adı: IEEE SENSORS JOURNAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex, INSPEC
  • Sayfa Sayıları: ss.8340-8348
  • Anahtar Kelimeler: Detectivity, ON/OFF ratio, polyvinylpyrrolidone (PVP)/SnS₂@n-Si, self-powered photodetector, SnS₂/PVP nanofibers (NFs)
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this work, we fabricated a polyvinylpyrrolidone (PVP)/SnS2 nanofibers (NFs)@n-Si heterojunction-based photodetector by loading SnS2 onto PVP NFs using the electrospinning technique and investigated its optoelectronic properties with the help of UV, IR, and visible illumination. The heterojunction gave an extraordinary rectification ratio as high as 4.45 x 10(5) in the +/- 2 V range in the dark. The PVP/SnS2 NFs@n-Si heterojunction device showed good photoresponse under UV, IR, and visible light, and the photoresponse increased with changing white light intensity. Under 150 mW white light, the ON/OFF ratio reached 1.55 x 10(6). The device has the highest responsivity and external quantum efficiency (EQE) of 1.97 A W-1 and 640 (%) (V = -2.0 V) for the UV light of 365 nm, respectively, while the highest D value is 4.82 x 10(12) Jones (at zero bias) for 590 nm. Even 85 days after device fabrication, the device's rectifying ratio and photoresponse under all light sources were observed to be very high.