Akademik Veri Yönetim Sistemi
2nd International Congress on Semiconductor Materials and Devices (ICSMD), Ardahan, Türkiye, 28 - 30 Ağustos 2018, cilt.46, ss.6913-6915
In this study, WO3 metal oxide structure was investigated as an optical gas sensor. 90 nm WO3 thin films were grown by RF magnetron sputtering on glass substrates. In order to obtain a sensitive layer for H-2 gas, 10 nm Pt was coated on the top of WO3 film gas by the same technique. Optical absorbance variations of Pt activated WO3 thin film gas sensor structure (Pt/WO3) were measured at 40 degrees C, 75 degrees C and 125 degrees C for different Hydrogen concentration level of 1000 ppm -40.000 ppm. A tungsten halogen lamb and a CCD spectrometer was used at optical gas sensor test system to measure optical absorbance of sensor real-time. (C) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.