Structural Characterization of InSe:Zn Layer Semiconductor Grown by Bridgman/Stockbarger Technique
IPCAP 2016, International Physics Conference at the Anatolian Peak, 02-PP03 S:164, 25-27 February/2016 Erzurum/Türkiye., 25 - 27 Şubat 2016, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Atatürk Üniversitesi Adresli: Evet