Radiation hardness of ZnO at low temperatures

Coskun, C; Look, DC; Farlow, GC; Sizelove, JR

doi:10.1088/0268-1242/19/6/016

Radiation hardness of ZnO at low temperatures

Coskun C., Look D., Farlow G., Sizelove J.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.19, sa.6, ss.752-754, 2004 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 19 Sayı: 6
Basım Tarihi: 2004
Doi Numarası: 10.1088/0268-1242/19/6/016
Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.752-754
Atatürk Üniversitesi Adresli: Hayır

Özet

In situ Hall-effect measurements have been carried out on vapour-phase-grown, n-type ZnO irradiated with 1.0 and 1.5 MeV electrons in the [000-1] direction. The electrical properties change very little during irradiation at temperatures as low as 130 K, the lowest temperature presently attainable under 1 MeV, 0.3 muA cm(-2) irradiation. It is concluded that long-term damage in ZnO is limited by defect annihilations that are rapid on the time scale of the experiment (<1 min), even at 130 K.