A study of the rectifying behaviour of aniline green-based Schottky diode

AYDOĞAN Ş., Gullu O.

MICROELECTRONIC ENGINEERING, cilt.87, sa.2, ss.187-191, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 87 Sayı: 2
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.mee.2009.07.007
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.187-191
  • Anahtar Kelimeler: Schottky barrier, Ideality factor, Organic semiconductor, Aniline green, CAPACITANCE-VOLTAGE CHARACTERISTICS, FREQUENCY-DEPENDENCE, HETEROSTRUCTURE DIODES, INTERFACE STATES, CONTACTS, GA2TE3
  • Atatürk Üniversitesi Adresli: Evet

Özet

An Al/aniline green (AG)/Ga(2)Te(3) device was fabricated and the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the device have been investigated at room temperature. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde methods were compared, and it was seen that there was an agreement with each other. It was seen that the forward bias current-voltage characteristics at sufficiently large voltages has shown the effect of the series resistance. In addition, it was seen from the C-f characteristics that the values of capacitance have been decreased towards to the high frequencies. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the Ga(2)Te(3) that can follow the ac signal. (C) 2009 Elsevier B.V. All rights reserved.