Akademik Veri Yönetim Sistemi
PHILOSOPHICAL MAGAZINE, cilt.95, sa.31, ss.3413-3428, 2015 (SCI-Expanded)
Thin film of biopolymeric compound chitosan (CTS) has been surfaced on moderately doped n-InP substrate as an interfacial layer by means of spin coating for the electronic modification of Au/n-InP structure. Electrical characterization of Au/CTS/n-InP hybrid junction has been performed by I-V and C-V measurements at room temperature. An effective barrier height (BH) value of 0.678eV and an ideality factor of n=1.665 have been obtained for the hybrid junction. The CTS interfacial layer has been found to reduce the reverse bias leakage current of the junction by about three orders of magnitude and enhance the BH by about 0.213eV. Furthermore, the BH value of the hybrid junction has been obtained as 0.693eV by C-V measurement. Good performance of the device could be ascribed to the passivation effect of the CTS interfacial layer between Au and n-InP. The BH values of 0.678 and 0.693eV for the hybrid junction have been significantly higher than that of the conventional Au/n-InP junction (similar to 0.465eV). The results indicated that biopolymeric thin interfacial CTS layer might lead to the modification of the potential barrier for metal/n-InP junctions. Moreover, band gap of the CTS layer has been determined as 4.60eV via UV-vis spectroscopy.