Development of a hybrid photodetector device between pyruvic acid (CH3COCOOH) and silicon

Orhan Z., Yıldırım F., Taşkın M., İncekara Ü., Aydogan S.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.36, sa.10, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 36 Sayı: 10
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1088/1361-6641/ac1a2b
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Anahtar Kelimeler: organic photodetectors, pyruvic acid, responsivity, detectivity, ON, OFF ratio, PEROVSKITE SOLAR-CELLS, SCHOTTKY DIODES, ELECTRICAL CHARACTERIZATION, TEMPERATURE, EFFICIENT, PERFORMANCE, VOLTAGE, RANGE, DEPOSITION, SURFACE
  • Atatürk Üniversitesi Adresli: Evet

Özet

The authors report on the fabrication of a pyruvic acid (Pyr)/p-Si heterojunction photodetector and analyses of electro-optical behavior of the device. First, Pyr film was coated on p-Si by spin coating method. The morphology and elemental structure of this film were determined by scanning electron microscopy and energy dispersive x-ray analysis, respectively. In order to analyze the device's performance, the current-voltage (I-V) measurements were performed in the dark. The device was a rectification ratio of about 10(5) in the dark, and photodetector device parameters such as responsivity, on/off ratio and specific detectivity were analyzed in light intensity-dependent I-V measurements. Measurements depending on the light intensity were carried out between 15 and 30 mW cm(-2), at 5 mW cm(-2) intervals. The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements carried out in the dark were analyzed at low and high frequencies in addition to the dielectric properties of the Pyr/p-Si heterojunction. Experimental results showed that the Pyr/p-Si device can be effectively applied to optical sensors and imaging devices.