Atıf İçin Kopyala
Turgut E.
Recep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisi, cilt.5, sa.1, ss.133-140, 2024 (Hakemli Dergi)
Özet
In this study, the structure of silicon iron oxide (Si:Fe2O3)
was grown using co-sputtering. The Si:Fe2O3 film was
grown on glass substrates at a pressure of 8.5 mTorr and a temperature of 450°C
for 35 minutes. Optical measurements were revealed that the band gap of the
structure ranged from 2,54 to 2.73 eV. The roughness values of the obtained
films were observed as Ra 3.08 nm and Sa 2.7 nm for Si:Fe2O3,
and Ra 1.88 nm and Sa 2.09 nm for Fe2O3, respectively. As
obtained from XPS data, the change in binding energy was observed to depend on
the electron exchange between silicon, iron and oxygen. In the iron-silicon
oxide structure, the energy increased slightly as a result of the chemical
environment. The Si4+ ion had a strong tendency to distribute itself
within the tetrahedral region of spinel-like structures. The behavior of the
structure was influenced by the stoichiometry of oxygen. The consistent results
from both XRD and SEM images indicated that the crystal grain sizes gradually
decreased as the silicon content increased.
Keywords: Silicon iron oxide, Co-sputtering, Spinel-like structures, Thin film,
Semiconductor