Akademik Veri Yönetim Sistemi
Journal of Alloys and Compounds, cilt.1056, 2026 (SCI-Expanded, Scopus)
This study investigates the broadband photodetector performance of a CZTS/n-Si heterojunction. CZTS thin films were characterized using XRD, Raman, UV-Vis, SEM, and EDS. To create a high-performance, broadband p-n heterojunction, n-type silicon was strategically selected to complement the intrinsic p-type nature of CZTS, thereby enhancing the separation and collection of photo-generated carriers. The device demonstrated outstanding photoresponsivity across white, yellow, UV (365 and 395 nm), and IR (850 nm) spectrums. Under white light (150 mW/cm²), the device achieved an on/off ratio of 3.46 × 10⁴, a detectivity of 2.71 × 10 ¹ ¹ Jones at zero bias, and a responsivity of 129 mA/W at −2.0 V. Peak performance was observed at 590 nm, yielding a high responsivity of 1069 mA/W (-2.0 V) and a detectivity of 2.49 × 10 ¹ ² Jones (zero bias). Furthermore, the device exhibited excellent environmental stability over 80 days and rapid response times (rise/fall: 11.7/15.8 ms). These results highlight the CZTS/n-Si heterojunction as a promising candidate for high-performance, stable, next-generation optoelectronic applications."