Fabrication and electrical characteristics of Schottky diode based on organic material

Guellue O., AYDOĞAN Ş., TUERUET A.

MICROELECTRONIC ENGINEERING, cilt.85, sa.7, ss.1647-1651, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Sayı: 7
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.mee.2008.04.003
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1647-1651
  • Anahtar Kelimeler: Schottky diode, barrier height, ideality factor, series resistance, orange G, CURRENT-VOLTAGE, ENERGY-DISTRIBUTION, PARAMETERS, GAAS
  • Atatürk Üniversitesi Adresli: Evet

Özet

The current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of Al/Orange G/n-Si/AuSb structure were investigated at room temperature. A modified Norde's function combined with conventional forward I-V method was used to extract the parameters including barrier height (BH) and the series resistance. The barrier height and series resistance obtained from Norde's function was compared with those from Cheung functions, and it was seen that there was a good agreement between series resistances from both methods., The C-V characteristics were performed at 10 kHz and 500 kHz frequencies, and C-f characteristics were performed 0.0 V, +0.4 V and -0.4 V. (c) 2008 Elsevier B.V. All rights reserved.