Fabrication and characterization of α-Fe2O3 nanoparticle-based devices: Effects on photosensitivity and electrical performance

DAŞ E., ORHAN Z., Bozkurt G.

Sensors and Actuators A: Physical, cilt.382, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 382
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.sna.2024.116138
  • Dergi Adı: Sensors and Actuators A: Physical
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Interface engineering, Microemulsion synthesis, Photo-electrical properties, Self-powered
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this study, α-Fe2O3 nanoparticles (NPs) were synthesized via the micro-emulsion method and their integration in the metal/interfacial layer/semiconductor device structure was comprehensively investigated. The α-Fe2O3 NPs were coated onto n-Si and p-Si substrates through the spin coating method. The physical characteristics of the prepared films were analyzed using XRD, SEM/EDS, and UV-Vis analyses. Fabricated devices, Au/Fe2O3/n-Si/Al and Au/Fe2O3/p-Si/Al, were compared with reference devices to elucidate the impact of α-Fe2O3 NPs on their electrical properties under both dark and illuminated conditions. Key diode parameters, such as the ideality factor (n), barrier height (Φb), and saturation current (Io), were calculated and compared across all devices using Thermionic Emission (TE) and Norde methods. Additionally, electro-optical characteristics of the Fe2O3/n-Si and Fe2O3/p-Si devices were evaluated in terms of ON/OFF ratio, responsivity (R), and specific detectivity (D*). The results showed that both devices are photosensitive. Specifically, the Fe2O3/n-Si device exhibited a higher ON/OFF ratio and D* at 0 V, indicating its self-powered characteristic. In contrast, the Fe2O3/p-Si device's R and D* values increased with higher reverse bias voltage, peaking at -2V. These findings underscore the enhanced sensitivity and efficiency of the Fe2O3/n-Si device under zero bias, making it more suitable for high-sensitivity and self-powered optoelectronic applications.