Characterization of CulnS(2) Thin Films with Different Cu/In Ratio

Kundakci M.

CHINESE JOURNAL OF CHEMICAL PHYSICS, cilt.23, sa.5, ss.582-586, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 23 Sayı: 5
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1088/1674-0068/23/05/582-586
  • Dergi Adı: CHINESE JOURNAL OF CHEMICAL PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.582-586
  • Anahtar Kelimeler: Thin film, Successive ionic layer adsorption, Chalcopyrite compound, SOLAR-CELLS, CUINS2, DEPOSITION, GROWTH
  • Atatürk Üniversitesi Adresli: Evet

Özet

Thin films of CuInS2 were grown on glass substrate by successive ionic layer adsorption and reaction method with different [Cu]/[In] ratios and annealed at 400 degrees C for 30 min. The crystal structure and grain sizes of the thin films were characterized by X-ray diffraction method. Atomic force microscopy was used to determine surface morphology of the films. Optical and electrical properties of these films were investigated as a function of [Cu]/[In] ratios. The electrical resistivity of CuInS2 of thin films was determined using a direct current-two probe method in the temperature range of 300-470 K. It is observed that, the electrical resistivity values show a big decreasing with increasing [Cu]/[In] ratio. Hence, the [Cu]/[In] ratio in the solution can drastically affect the structural, electrical, and optical properties of thin films of CuInS2.