Physica Status Solidi (A) Applied Research, cilt.184, sa.2, ss.349-357, 2001 (SCI-Expanded)
TlGaS2, TlGa0.99Fe0.01S2 and TlGa0.98Fe0.02S2 single crystals were grown by the modified Bridgman-Stockbarger method. They did not have cracks and voids on their surface. The absorption measurements were carried out on TlGaS2, TlGa0.99Fe0.01S2 and TlGa0.98Fe0.02S2 samples in the temperature range 10-320 K with steps of 10 K. The phonon energies calculated for TlGaS2, TlGa0.99Fe0.01S2 and TlGa0.98Fe0.02S2 are (19.70 ± 5), (40.2 ± 5) and (15.1 ± 5) meV, respectively. The first and second defect levels have been found as 2.423 and 2.569 eV for TlGa0.99Fe0.01S2 and as 2.017 and 2.426 eV for TlGa0.98Fe0.02S2 at 10 K, respectively.