The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts

YILDIRIM N., TÜRÜT A., Turut V.

MICROELECTRONIC ENGINEERING, cilt.87, sa.11, ss.2225-2229, 2010 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 87 Sayı: 11
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.mee.2010.02.007
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2225-2229
  • Anahtar Kelimeler: Double-Gaussian distribution, Schottky barrier diode, Barrier inhomogeneity, CURRENT-VOLTAGE CHARACTERISTICS, I-V-CURVES, INTERSECTING BEHAVIOR, LOW-TEMPERATURES, DIODES, GAAS, PARAMETERS, INP
  • Atatürk Üniversitesi Adresli: Evet

Özet

We have considered multi-Gaussian distribution of barrier-heights for non-interactive barrier inhomogeneities in the inhomogeneous Schottky diodes, and we have shown the presence of the intersecting behavior in the forward-bias current-voltage (I-V) curves for the double-Gaussian distribution model at low temperatures. We have tried to eliminate this effect by generating I-V curves at lower temperatures with the bias-dependent barrier-height expression which leads to the ideality factors greater than unity. For this calculation, we have obtained the expressions for the barrier-height change and ideality factor, and for bias-dependency of the BH for the multi-Gaussian model by following the literature. We have shown that the experimental forward-bias I-V curves coincide with the theoretical ones using the bias-dependent inhomogeneous BH expression at low and high temperatures in the double-Gaussian distribution of BHs. (C) 2010 Elsevier B.V. All rights reserved.