Akademik Veri Yönetim Sistemi
IPCAP 2016, 25 - 27 Şubat 2016
In this study, a device applications of organic material Fast Green FCF (C37H34N2Na2O10S3Na2) has been investigated. After chemical cleaning process of boron doped n-Si crystals, Al metal was coated on the one surface of crystals by thermal evaporation and fast green organic materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Finally, Ni metal was coated on Fast Green by sputtering and we obtained the Ni/Fast Green FCF/n-Si/Al Schottky type diode. And then we calculated the basic diode parameters of device with current-voltage (I-V) and capacitance voltage (C-V) measurements at the room temperature. We calculated the ideality factory (n), barrier height (Phi(b)) of rectifing contact from I-V measurements using thermionic emission methods. Furthermore, we calculated ideality factory (n), barrier height (00 and series resistance (R-s) of device using Cheung and Norde functions too. The diffusion potential, barrier height, Fermi energy level and donor concentration have been determined from the linear 1/C-2-V curves at reverse bias, at room temperature and various frequencies. Besides we measured the current-voltage (I-V) at under light and analyzed the characteristics of the solar cell device.