Electrical analysis of organic dye-based MIS Schottky contacts

Gullu O., Turut A.

MICROELECTRONIC ENGINEERING, cilt.87, sa.12, ss.2482-2487, 2010 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 87 Sayı: 12
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.mee.2010.05.004
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2482-2487
  • Anahtar Kelimeler: Schottky diode, Interface states, Series resistance, Organic thin film, CAPACITANCE-VOLTAGE CHARACTERISTICS, C-V CHARACTERISTICS, BARRIER HEIGHT, SI, DIODES, PARAMETERS, COMPOUND, TRANSPORT, JUNCTION, INHOMOGENEITIES
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film on p-Si substrate. Metal(Al)/interlayer(Orange G=OG)/semiconductor(p-Si) MIS structure had a good rectifying behavior. By using the forward-bias I-V characteristics, the values of ideality factor (n) and barrier height (BH) for the Al/OG/p-Si MIS diode were obtained as 1.73 and 0.77 eV, respectively. It was seen that the BH value of 0.77 eV calculated for the Al/OG/p-Si MIS diode was significantly larger than the value of 0.50 eV of conventional Al/p-Si Schottky diodes. Modification of the potential barrier of Al/p-Si diode was achieved by using thin interlayer of the OG organic material. This was attributed to the fact that the OG organic interlayer increased the effective barrier height by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 2.79 x 10(13) to 5.80 x 10(12) eV(-1) cm(-2). (C) 2010 Elsevier B.V. All rights reserved.