Optical and structural properties of ZnO thin films; effects of high energy electron irradiation and annealing
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.266, sa.9, ss.2021-2026, 2008 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 266 Sayı: 9
- Basım Tarihi: 2008
- Doi Numarası: 10.1016/j.nimb.2008.03.198
- Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.2021-2026
- Anahtar Kelimeler: ZnO, electron irradiation, PL, XRD, annealing, defect, recombination lifetime
- Atatürk Üniversitesi Adresli: Evet
Özet
High energy electron irradiation (HEEI) effects on the as-grown and annealed ZnO thin films grown by electrochemical deposition were investigated. Both samples were exposed to the sequential electron irradiations of 6, 12 and 15 MeV energies at a fluence of 1 x 10(12) e(-)/cm(2). The results of X-ray diffraction suggest that a highly strong crystallographic structure can be produced by annealing process. Photoluminescence (PL) studies show that the El produces violet emission which results from the zinc interstitial. Recombination lifetime (RL) values of the both films reveal that the high quality crystals are obtained. The decreasing trends of RL values with increasing electron energy have been explained by the formation of crystal defects due to the HEEL (c) 2008 Elsevier B.V. All rights reserved.