Extraction of electronic parameters of Schottky diode based on an organic Orcein

AYDOĞAN Ş., İNCEKARA Ü., DENIZ A. R., Turut A.

MICROELECTRONIC ENGINEERING, cilt.87, sa.12, ss.2525-2530, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 87 Sayı: 12
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.mee.2010.06.004
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2525-2530
  • Anahtar Kelimeler: Schottky barrier height, Orcein, Organic materials, Ideality factor, Capacitance measurements, CAPACITANCE-VOLTAGE CHARACTERISTICS, ELECTRICAL CHARACTERISTICS, TEMPERATURE, FABRICATION, SURFACES
  • Atatürk Üniversitesi Adresli: Evet

Özet

An Au/Orcein/p-Si/Al device was fabricated and the current-voltage measurements of the devices showed diode characteristics. Then the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the device were investigated at room temperature. Some junction parameters of the device such as ideality factor, barrier height, and series resistance were determined from I-V and C-V characteristics. The ideality factor of 2.48 and barrier height of 0.70 eV were calculated using I-V characteristics. It has been seen that the Orcein layer increases the effective barrier height of the structure since this layer creates the physical barrier between the Au and the p-Si. The interface state density N(ss) were determined from the I-V plots. The capacitance measurements were determined as a function of voltage and frequency. It was seen that the values of capacitance have modified with bias and frequency. (C) 2010 Elsevier B.V. All rights reserved.