Differential inelastic scattering cross-section of silicon and gallium arsenide semiconductor crystals

Kabil H., ŞAKAR E., Meral A., ŞAHİN M., GÜROL A.

Asian Journal of Chemistry, cilt.28, sa.6, ss.1389-1392, 2016 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 28 Sayı: 6
  • Basım Tarihi: 2016
  • Doi Numarası: 10.14233/ajchem.2016.19823
  • Dergi Adı: Asian Journal of Chemistry
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1389-1392
  • Anahtar Kelimeler: Crystal structure, Differential inelastic scattering cross sections, Semiconductors
  • Atatürk Üniversitesi Adresli: Evet

Özet

Because of the extensive usage of silicon and gallium arsenide semiconductor crystals, the differential inelastic scattering cross-sections at 59.5 keV have been measured for various scattering angles changing from 120 to 150 degrees by using an energy dispersive X-ray fluorescence spectrometer. The spectrometer includes an Am-241 radio isotopes as photon source and a Si(Li) detector. Experimental results of differential inelastic scattering cross-sections compared with theoretical results. We found a good agreement between experimental and theoretical values in the standard uncertainties. To our best of knowledge, these results are first data in the differential inelastic scattering cross-sections of silicon and gallium arsenide crystals.