Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range

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Atıf İçin Kopyala

EFEOĞLU H., Turut A., Gül M.

Journal of Electronic Materials, cilt.52, sa.2, ss.1410-1418, 2023 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 52 Sayı: 2
• Basım Tarihi: 2023
• Doi Numarası: 10.1007/s11664-022-10062-6
• Dergi Adı: Journal of Electronic Materials
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Compendex, Computer & Applied Sciences, INSPEC
• Sayfa Sayıları: ss.1410-1418
• Anahtar Kelimeler: Schottky barrier diodes, metal-based Schottky contact, silicide-based PtSi Schottky contact, temperature-dependent I-V characteristics, Schottky barrier height, BARRIER HEIGHT, ELECTRICAL CHARACTERISTICS, CAPACITANCE-VOLTAGE, THERMAL-STABILITY, DEPENDENCE, TRANSPORT, CONTACTS, INHOMOGENEITY, INTERFACES, GAAS
• Atatürk Üniversitesi Adresli: Evet

Özet

© 2022, The Minerals, Metals & Materials Society.We have compared the I–V–T characteristics of the metal-based Pt/n-Si and silicide-based PtSi/n-Si Schottky barrier (SB) diodes in the temperature range of 40–320 K. The results revealed that the silicide-based diode (6.00 Ω at 40 K to 6.50 Ω at 320 K) has lower series resistance Rs values than those of the metal-based diode (7.10 Ω at 40 K to 8.50 Ω at 320 K). Again, the SB height values of 0.806 eV and 0.875 eV for the metal-based and silicide-based SB diodes, respectively, have been obtained at 300 K, which are consistent with the values in the literature. The lower Rs and higher SB height obtained for the silicide-based PtSi/n-Si diode is a clear evidence for the use of the metal silicide instead of metal for the device performance and reliability in Si technology. Furthermore, the I–V curves of the silicide-based diode have shown a double slope separated by a transition segment at temperatures below 170 K.