Growth and Characterizations of GaSe and GaSe:Cd Single Crystals by Bridgman/Stockbarger Technique
International Congress on Semiconductors Materials and Devices ICSMD-2017, 17 - 19 Ağustos 2017, (Özet Bildiri)
- Yayın Türü: Bildiri / Özet Bildiri
- Atatürk Üniversitesi Adresli: Evet