Akademik Veri Yönetim Sistemi
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.46, ss.38-42, 2012 (SCI-Expanded)
Polyaniline/p-Si/Al and polypyrrole/p-InP rectifying devices were fabricated. Electrochemical polymerization method has been used for obtaining the polymer films. Some electrical characteristics, such as current-voltage and conductance-voltage/frequency measurements were analyzed. From the I-V characteristics of the devices ideality factor and barrier height values were found as n = 2.12, Phi = 0.79 eV and n = 1.68, Phi = 0.59 eV for polyaniline/p-Si/Al and polypyrrole/p-InP devices respectively. Series resistance R-s calculations were performed as a function of temperature for polyaniline/p-Si/Al device. The values of R-s decreased with temperature for this device. The voltage and temperature dependence of R-s were attributed to the particular distribution density of interface states and interfacial insulator or polymer layer. The conductance-voltage and conductance-frequency characteristics of polypyrrole/p-InP device were investigated at room temperature. It has been seen that the effect of the series resistance is negligible for polypyrrole/p-InP device. (c) 2012 Elsevier B.V. All rights reserved.