Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.25, sa.6, ss.2808-2828, 2014 (SCI-Expanded)
V doped SnO2 and SnO2:F thin films were successfully deposited on glass substrates at 500 A degrees C with spray pyrolysis. It was observed that all films had SnO2 tetragonal rutile structure and the preferential orientation depended on spray solution chemistry (doping element and solvent type) by X-ray diffraction measurements. The lowest sheet resistance and the highest optical band gap, figure of merit, infrared (IR) reflectivity values of V doped SnO2 for ethanol and propane-2-ol solvents and V doped SnO2:F films were found to be 88.62 a"broken vertical bar aEuro"3.947 eV-1.02 x 10(-4) a"broken vertical bar(-1)-65.49 %, 65.35 a"broken vertical bar aEuro"3.955 eV-8.54 x 10(-4) a"broken vertical bar(-1)-72.58 %, 5.15 a"broken vertical bar aEuro"4.076 eV-6.15 x 10(-2) a"broken vertical bar(-1)-97.32 %, respectively, with the electrical and optical measurements. Morphological properties of the films were investigated by atomic force microscope and scanning electron microscope measurements. From these analysis, the films consisted of nanoparticles and the film morphology depended on doping ratio/type and solvent type. It was observed pyramidal, polyhedron, needle-shaped and spherical grains on the films' surfaces. The films obtained in present study with these properties can be used as front contact for solar cells and it can be also one of appealing materials for other optoelectronic and IR coating applications.