Detecting hydrogen using TiO2-B2O3 at different operating temperature

CHACHULİ S. A. M., HAMİDOM M. N., Mamat M. S., ERTUĞRUL M.

13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, Kuala-Lumpur, Malezya, 15 - 17 Ağustos 2018, ss.37-40 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Doi Numarası: 10.1109/smelec.2018.8481214
  • Basıldığı Şehir: Kuala-Lumpur
  • Basıldığı Ülke: Malezya
  • Sayfa Sayıları: ss.37-40
  • Anahtar Kelimeler: gas sensor, TiO2-B2O3, hydrogen, nitrogen, organic binder, GAS SENSOR, FABRICATION, NANOTUBES, FILMS
  • Atatürk Üniversitesi Adresli: Evet

Özet

Performance of TiO2-B2O3 gas sensor that annealed using nitrogen at 650 degrees C for 30 minutes was observed and analyzed. The sensing film of the gas sensor was prepared by mixing TiO2-B2O3 with an organic binder. The sensing film was characterized by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). The gas sensor was exposed to hydrogen at a concentration of 100 1000 ppm with operating temperatures of 100 degrees C and 200 degrees C. However, no response was detected for 100 ppm at 100 degrees C. But, as the operating temperature was increased to 200 degrees C, the gas sensor indicated a good response for 100 ppm of hydrogen. The gas sensor exhibited p-type response based on decreased current when exposed to hydrogen. The sensitivity of gas sensor was calculated at 1.00, 2.18 and 3.58 for 100 ppm, 500 ppm and 1000 ppm respectively, at an operating temperature of 200 degrees C.