Highly Air-Stable and Sensitive Self-Powered Broadband Photodetector Based on a PVA-MoS2 Fibers/n-Si Heterojunction


Rouhi H. F., YILDIRIM F., Mahmoudi Chenari H., Biber M., AYDOĞAN Ş.

ACS Applied Electronic Materials, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1021/acsaelm.4c01854
  • Dergi Adı: ACS Applied Electronic Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex
  • Anahtar Kelimeler: 2D materials, fibers, heterojunction, photodetector, PVA−MoS2
  • Atatürk Üniversitesi Adresli: Evet

Özet

We designed and demonstrated a self-powered poly(vinyl alcohol) (PVA)-MoS2 fibers/n-Si heterojunction (HJ) device for a high-performance photodetector. Light-intensity-dependent I-V measurements were carried out, ranging from the dark to 150 mW/cm2 for visible light. Furthermore, electro-optical measurements of HJ under UV (365 and 395 nm), IR (850 nm), and yellow light (590 nm) for constant light power were investigated in detail with the help of I-V characteristics. The PVA-MoS2/n-Si device showed a pronounced photoresponse at all of these wavelengths. The optimum values of the wavelength-dependent photodetector parameters were obtained under yellow light. In the evaluation of the optical measurements under yellow light, the maximum on/off ratio, R, D, NPDR, and EQE values were 2.91 × 105 (zero bias), ∼480 mA/W (V = −2.0 V), 5.71 × 1012 Jones (zero bias), 4.64 × 109 W1- (zero bias), and 100.8 (V = −2.0 V), respectively. Furthermore, after 25 and 125 days without any encapsulation, the air stability of the device was observed to be excellent in the dark and the light.