Highly Air-Stable and Sensitive Self-Powered Broadband Photodetector Based on a PVA-MoS<sub>2</sub> Fibers/n-Si Heterojunction

Rouhi H. F., YILDIRIM F., Mahmoudi Chenari H., Biber M., AYDOĞAN Ş.

ACS APPLIED ELECTRONIC MATERIALS, cilt.7, sa.2, ss.757-765, 2025 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 7 Sayı: 2
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1021/acsaelm.4c01854
  • Dergi Adı: ACS APPLIED ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
  • Sayfa Sayıları: ss.757-765
  • Anahtar Kelimeler: 2D materials, fibers, heterojunction, photodetector, PVA−MoS2
  • Atatürk Üniversitesi Adresli: Evet

Özet

We designed and demonstrated a self-powered poly(vinyl alcohol) (PVA)-MoS2 fibers/n-Si heterojunction (HJ) device for a high-performance photodetector. Light-intensity-dependent I-V measurements were carried out, ranging from the dark to 150 mW/cm(2) for visible light. Furthermore, electro-optical measurements of HJ under UV (365 and 395 nm), IR (850 nm), and yellow light (590 nm) for constant light power were investigated in detail with the help of I-V characteristics. The PVA-MoS2 /n-Si device showed a pronounced photoresponse at all of these wavelengths. The optimum values of the wavelength-dependent photodetector parameters were obtained under yellow light. In the evaluation of the optical measurements under yellow light, the maximum on/off ratio, R, D, NPDR, and EQE values were 2.91 x 10(5) (zero bias), similar to 480 mA/W (V = -2.0 V), 5.71 x 10(12) Jones (zero bias), 4.64 x 10(9) W1- (zero bias), and 100.8 (V = -2.0 V), respectively. Furthermore, after 25 and 125 days without any encapsulation, the air stability of the device was observed to be excellent in the dark and the light.