P-Si(100)/InGaN Thin Film Structure and Investigation of Its Physical Properties: N2 Gas Flow Effect.

ERDOĞAN E., KUNDAKÇİ M.

INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017 August 17-19, 2017 Konya-TURKEY, 17 - 19 Ağustos 2017

  • Yayın Türü: Bildiri / Özet Bildiri
  • Atatürk Üniversitesi Adresli: Evet