Structural Characterization of InSe and InSe:Cu Binary Semiconductors Growing Using Bridgman/Stockbarger Technique and Effect of Copper

Journal of Materials Sciences and Applications, cilt.8, sa.105, ss.1-10, 2024 (Scopus)

The study of semiconductors has been going on for a century. The growth, research and development of single crystals is of

great importance to the advancement of semiconductor technology. The fact that research on these binary crystals can find

many applications in technology encourages researchers to work on this subject. Binary semiconductors are used in visible

and infrared light-emitting diodes, infrared detectors, converters, amplifiers, optical parameter oscillators and far-infrared

generators, as well as in the generation and recording of optical signals. Indium and selenium have been synthesised from

high purity elements (at least 99.999%) in stoichiometric ratios. InSe and InSe:Cu single crystals were successfully grown by

the modified Bridgman/Stockbarger crystal growth method with a doping of three tenthousandths of copper. Since the ingots

of the grown crystals have a layered structure, samples were easily prepared along the (001) planes. The most characteristic

feature of the III-VI layered semiconductor family is that it is layered. As the surface areas of the grown samples did

not contain any impurities, they were not subjected to any further chemical treatment. The structure of the InSe and

InSe:Cu semiconductors was analysed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive

x-ray (EDX) techniques.