The electrical and dielectric characterization of the Co/ZnO-Rods/p-Si heterostructure depending on the frequency

AYDOĞAN Ş., Kocyigit A., BOZKURT ÇIRAK B., Erdogan E., YILMAZ M.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.33, sa.9, ss.6059-6069, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 33 Sayı: 9
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s10854-022-07784-y
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.6059-6069
  • Atatürk Üniversitesi Adresli: Evet

Özet

Zinc oxide (ZnO) rods film was fabricated by homemade and simple spray pyrolysis technique on a p-type silicon (Si) substrate, and the film layer was employed as an interfacial material between the Co and p-type Si for obtaining Co/ZnO-Rods/p-Si heterostructure. The scanning electron microscopy (SEM) was used to discover the rods-like structures and uniform morphology of the ZnO film. The impedance spectroscopy technique was performed on the Co / ZnO-Rods/p-Si heterostructure to determine electrical and dielectric properties depending on the frequency. The C-V and G-V characteristics revealed that the electrical properties related to the frequency and voltage changes. The dielectric properties were studied depending on frequency by extracting dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), ac electrical conductivity (sigma), and real and imaginary parts of the electric modulus (M' and M ''). The results highlighted that the Co/ZnO-Rods/p-Si heterostructures can be employed for intermediate frequency applications.