Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, sa.8, ss.5807-5816, 2017 (SCI-Expanded)
Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit In1 - xCdxS, In2S3 and CdS thin films on glass substrate at room temperature. The crystal structure and crystal size of the thin films were characterized by X-ray diffraction (XRD) method. Scanning Electron Microscopy (SEM) was used to determine morphology and composition of the films. Optical and electrical properties of these films have been investigated as a function of temperature. The photoluminescence measurements were carried out at room temperature and absorption measurements were carried out in the temperature range 10-320 K with a step of 10 K. The band gap energies for CdS, In0.8Cd0.2S, In0.6Cd0.4S, In0.4Cd0.6S, In0.2Cd0.8S and In2S3 thin films were found as 2.22 eV, 2.56 eV, 2.52 eV, 2.46 eV, 2.38 eV, and 2.72 eV, respectively. The refractive indices (n), optical static and high frequency dielectric constants (, ) values have been calculated by using the energy bandgap values. The electrical resistivity of CdS, Cd0.5In0.5S and In2S3 thin films have been determined using a 'dc' two probe method, in the temperature range of 300-450 K. The electrical resistivity values have been calculated at 300 K.