The effect of thermal annealing on Ti/p-Si Schottky diodes

Asil Ugurlu H., cinar Demir K., Coskun C.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.32, sa.11, ss.15343-15351, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 32 Sayı: 11
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1007/s10854-021-06084-1
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.15343-15351
  • Atatürk Üniversitesi Adresli: Evet

Özet

Ti/p-Si Schottky barrier diodes (SBDs) have been prepared by metal evaporating method. The effect of low annealing temperature on electrical parameters such as series resistance (R-s), ideality factor (n) and barrier height (phi(b)) of Ti/p-Si Schottky diodes was investigated with the help of current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Schottky diodes have been annealed at temperatures from 50 to 200 degrees C for 1 min in N-2 atmosphere. phi(b), R-s and n were determined using Cheung and Norde functions in current-voltage characteristics. The Schottky barrier height of the as-deposited contact is found to be 0.747 eV (I-V), 1.038 eV (C-V), 0.622 eV [H(I)-I] and 0.786 eV [F(V)-V] and ideality factor as 1.3 (I-V) and 3.55 [dV/d(lnI)-I]. It has been seen that the barrier height, ideality factor and series resistance have changed with increasing annealing temperature up to 200 degrees C.