The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Soylu M., ABAY B., ONGANER Y.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.71, sa.9, ss.1398-1403, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 71 Sayı: 9
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.jpcs.2010.07.003
  • Dergi Adı: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1398-1403
  • Anahtar Kelimeler: Inorganic compounds, Organic compounds, Electrical properties, Thermal conductivity, CURRENT-VOLTAGE CHARACTERISTICS, CONTACT BARRIER DEVICES, TEMPERATURE-DEPENDENCE, SEMICONDUCTOR CONTACT, ELECTRICAL PARAMETERS, CURRENT-TRANSPORT, DIODES, HEIGHTS, INHOMOGENEITIES, INTERFACE
  • Atatürk Üniversitesi Adresli: Evet

Özet

Thin film of non-polymeric organic compound pyronine-B has been fabricated on moderately doped (MD) n-InP substrate as an interfacial layer using spin coating technique for the electronic modification of Au/MD n-InP Schottky contact. The electrical characteristics have been determined at room temperature. The barrier height and the ideality factor values for Au/pyronine-B/MD n-InP Schottky diode have been obtained from the forward bias I-V characteristics at room temperature as 0.60 eV and 1.041; 0.571 and 1.253 eV after annealing at 100 and 250 degrees C, respectively. An increase in annealing temperature at the Au/n-InP Schottky junction is shown to increase the reverse bias leakage current by about one order of magnitude and decrease the Schottky barrier height by 0.027 eV. Furthermore, the barrier height values for the Au/pyronine-B/MD n-InP Schottky diode have also been obtained from the C-V characteristics at room temperature as 1.001 and 0.709 eV after annealing at 100 and 250 degrees C, respectively. Finally, it was seen that the diode parameters changed with increase in the annealing temperature. (C) 2010 Elsevier Ltd. All rights reserved.