Akademik Veri Yönetim Sistemi
"9th International IFS and Contemporary Mathematics and Engineering Conference, Mersin, Türkiye, 8 - 11 Temmuz 2023, ss.255-256
The discovery of new materials has led to advances in optoelectronic technology and has become
a major source of motivation for many researchers. This has enabled higher efficiency values to
be achieved in solar cells, which have a very important place in optoelectronic technology [1, 2].
Heterojunction with intrinsic thin layer (HIT) solar cells are one of the highest cell efficiency
among silicon-based solar cells. HIT solar cells can be produced in different configurations [3, 4].
In this study, graphene/n-WS2/a-Si:H(i)/p-cSi/Ag HIT solar cell was designed and some
important photovoltaic properties were analyzed by using AFORS-HET software (version 2.5).
Tungsten disulfide (WS2) is an important member of the transition metal dialcogenides (TMDCs)
class, which includes hexagonal structured, layered materials with molecular formula of XY2,
where X is transition metals such as Nb, W, and Mo, and Y is chalcogens such as Te, Se, and S [5,
6]. Recently, ultrathin WS2 has become one of the interesting materials in the investigation of solar
cell structures due to its superior electrical and optical features [7]. The most important aim of this
study is to find a suitable way to enhance the performance of n-type WS2/p-cSi heterojunction
solar cells through simulation. The parameters of both the Si and WS2 layers were optimized, and
a photovoltaic conversion efficiency value of 23.47% was obtained in the simulations. As a result,
it has been shown that the WS2 material and the designed structure can be used in solar cell
applications.