Effect of Annealing on the Structural, Morphological and Optical Properties of MgO Nanowall Structures Grown by SILAR Method

İSKENDEROĞLU D., GÜNEY H.

JOURNAL OF ELECTRONIC MATERIALS, cilt.48, sa.9, ss.5850-5856, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 48 Sayı: 9
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1007/s11664-019-07346-9
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.5850-5856
  • Anahtar Kelimeler: Mg(OH)(2) nanowall, MgO nanowall, XPS, Raman spectrum, THIN-FILMS, MAGNESIUM-HYDROXIDE, MG(OH)2
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this study, MgO nanowall structures were grown on the glass substrate by the successive ionic layer adsorption and reaction (SILAR) method, and systematic annealing temperature effect on the grown film was investigated as the first study in the literature. The as-grown and annealed films have shown nanowall structures and no serious changes from surface morphology of thin films from the scanning electron microscope (SEM) images. After annealing up to 500 degrees C with the 100 degrees C increase, x-ray diffraction (XRD) measurements have shown that only the films annealed at 400 degrees C and 500 degrees C show the cubic MgO structures while the low annealing temperatures give rise to hexagonal Mg(OH)(2). A similar result, the transition from Mg(OH)(2) to MgO, has been observed from the x-ray photoelectron spectroscopy (XPS) measurements by the energy shift to lower binding energy of the O 1s peak. Absorption measurements have shown that band gap of thin films increases with rising annealing temperature. Raman spectra have shown that the Mg(OH)(2) peaks are obtained at wavenumbers 3647cm(-1), 442cm(-1) and 275cm(-1) and the MgO peaks are obtained at wavenumbers 1104cm(-1), 786cm(-1) and 574cm(-1).