Fabrication and electrical properties of Al/aniline green/n-Si/AuSb structure

AYDOĞAN Ş., Guellue O., Tueruet A.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.11, sa.2, ss.53-58, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 2
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.mssp.2008.11.004
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.53-58
  • Anahtar Kelimeler: Schottky contact, Schottky barrier height, Series resistance, Electrical characteristics, Aniline green, CAPACITANCE-VOLTAGE CHARACTERISTICS, SCHOTTKY CONTACTS, BARRIER HEIGHT, ENERGY-DISTRIBUTION, DIODES, PARAMETERS, SURFACES
  • Atatürk Üniversitesi Adresli: Evet

Özet

The current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of Al/aniline green(AG)/n-Si/AuSb structure were investigated at room temperature. A modified Norde's function combined with conventional forward I-V method was used to extract the parameters including barrier height (BH) and the series resistance. The barrier height and series resistance obtained from Norde's function was compared with those from Cheung functions, and it was seen that there was a good agreement between the BH values and series resistances from both methods. The C-V characteristics were performed at 10 and 500 kHz frequencies, and C-f characteristics were performed 0.0, +0.4 and -0.4V. (C) 2008 Elsevier Ltd. All rights reserved.