The effects of the time-dependent and exposure time to air on Au/n-GaAs schottky barrier diodes

Ozdemir A., Kokce A., Turut A.

APPLIED SURFACE SCIENCE, cilt.191, ss.188-195, 2002 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 191
  • Basım Tarihi: 2002
  • Doi Numarası: 10.1016/s0169-4332(02)00181-2
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.188-195
  • Atatürk Üniversitesi Adresli: Evet

Özet

A study on Au/n-GaAs Schottky barrier diode (SBD) parameters with and without thin native oxide layer fabricated on n-type GaAs has been made. The native oxide layer with different thicknesses on chemically cleaned GaAs surface was obtained by exposing the GaAs surfaces to clean room air before metal evaporation, The native oxide thicknesses of samples AuD2, AuD3, AuD4, AuD5. and AuD6 are in the form AuD2