Synthesis of nickel nanoparticles-deposited strontium titanate nanocubes (Ni-STO) and heterojunction electrical applications over a wide temperature range

Tasyurek L. B., AYDOĞAN Ş., SEVİM M., ÇALDIRAN Z.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.274, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 274
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.mseb.2021.115479
  • Dergi Adı: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Strontium titanate nanocubes, Nickel nanoparticles-deposited, Heterojunction, Electrical characteristic, CAPACITANCE-VOLTAGE CHARACTERISTICS, I-V-T, SCHOTTKY DIODES, SRTIO3 PEROVSKITE, THIN-FILMS, PHOTOCATALYTIC ACTIVITY, ELECTRONIC PARAMETERS, NI/SRTIO3 CATALYSTS, HYDROGEN-PRODUCTION, PHASE-TRANSITION
  • Atatürk Üniversitesi Adresli: Evet

Özet

In the present study, the structural properties of nickel nanoparticles-deposited strontium titanate nanocubes (NiSTO) were examined by taking XRD, ICP-MS, TEM and SEM images. Temperature-dependent capacitance-voltage (C-V) and current-voltage (I-V) measurements were made for the electrical characterization of the Ni/Ni-STO/n-Si heterojunction devices produced. As the temperature increases from 80 K to 400 K, the ideality factor (n) decreases from 2.30 to 1.02 while barrier height (BH) increases from 0.27 eV to 0.80 eV. In the heterojunction device between Ni-STO and n-type Si, electrons can be captured at the Schottky barrier interface and recombinations can be reduced. Devices produced with Ni-STO material had a positive effect on performance compared to the devices produced with STO in previous studies. The electrical parameters obtained give compatible results as a function of temperature. Metal deposited STOs are potential candidates for temperaturedependent sensors and electrical devices.