Measurement of gamma-ray transmission factors of semiconductor crystals at various annealing temperature and time

Akca B., ERZENEOĞLU S. Z., GÜRBULAK B.

INDIAN JOURNAL OF PURE & APPLIED PHYSICS, cilt.53, sa.1, ss.49-55, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 53 Sayı: 1
  • Basım Tarihi: 2015
  • Dergi Adı: INDIAN JOURNAL OF PURE & APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.49-55
  • Anahtar Kelimeler: Transmission factors, Crystal growth, InSe, Semiconductor crystals, Bridgman/Stockbarger technique, EDXRF, XRD, MASS ATTENUATION COEFFICIENTS, SELENIDE THIN-FILMS, SINGLE-CRYSTALS, INSE, GROWTH, PHASE, GD
  • Atatürk Üniversitesi Adresli: Evet

Özet

In the present study, the change according to the annealing temperature and time of gamma-ray transmission factors or transmissivity of InSe, InSe:Sn semiconductor crystals that prepared by not evaporated onto the stage (glass) and InSe, InSe:Mn, InSe:Fe, InSe:Ag, InSe:Cd, InSe:Sn and InSe:Gd semiconductor crystals that prepared by evaporated onto the stage (glass), have been examined. Gamma-rays of Am-241 passed through crystals have been detected by a high-resolution Si(Li) detector and by using energy dispersive X-ray fluorescence spectrometer (EDXRF). Undoped-InSe and Mn, Fe, Ag, Cd, Sn, Gd doped InSe semiconductor crystals have been grown by using the Bridgman/Stockbarger. Evaporated onto the stage crystals have been prepared by using thin-film coatings system with thermal evaporation method. The structural and lattice parameters of the InSe and InSe:Sn semiconductors have been analyzed by using X-ray diffractometer (XRD). Transmission factors have been given graphically against the annealing temperature and time for time range 0 (unannealed)-60 min with a step of 10 min Also, transmission factors have been measured for annealing temperature range 50-(combustion temperature of the crystal) with a step of 50 degrees C for not evaporated onto the stage semiconductor crystals. Transmission factors have been measured for annealing temperature range 60 degrees C-(cracking temperature of the stage) with a step of 60 degrees C for evaporated onto the stage crystals. Results are presented and discussed in the present paper.