Determination of the some electronic parameters of nanostructure copper selenide and Cu/Cu3Se2/n-GaAs/In structure

Guzeldir B., Saglam M., Ates A., Turut A.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.627, ss.200-205, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 627
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1016/j.jallcom.2014.11.182
  • Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.200-205
  • Anahtar Kelimeler: Cu3Se2, Nanostructure, Sandwich structure, Gaussian distribution, CURRENT-VOLTAGE CHARACTERISTICS, BARRIER HEIGHT DISTRIBUTION, DEPENDENT CURRENT-VOLTAGE, SCHOTTKY DIODES, THIN-FILMS, ELECTRICAL CHARACTERISTICS, CAPACITANCE-VOLTAGE, TEMPERATURE, DEPOSITION, TRANSPORT
  • Atatürk Üniversitesi Adresli: Evet

Özet

The nanostructure copper selenide thin film has been grown on n-type gallium arsenide substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The film has been characterized by Xray Diffraction (XRD), Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) measurements. X-ray diffraction analysis of the film confirms a polycrystalline with preferred orientation. The AFM and SEM micrographs of the film reveal smooth and uniform surface pattern without any dark pits, pinholes and microcracks. The Cu/Cu3Se2/n-GaAs/In structure has been thermally formed in evaporating system after the SILAR process. The electrical analysis of Cu/Cu3Se2/n-GaAs/In structure has been investigated by means of current-voltage (I-V) measurements in the temperature range of 60-400 K in dark conditions. The values of barrier height (BH) and ideality factor (n) ranged from 0.21 eV and 4.97 (60 K) to 0.83 eV and 1.14 (400 K), respectively. In the calculations, the electrical parameters of the experimental forward bias I-V characteristics of the Cu/Cu3Se2/n-GaAs/In with the homogeneity in the 60-400 K range have been explained by means of the thermionic emission (TE), considering Gaussian distribution (GD) of BH with linear bias dependence. (C) 2014 Elsevier B.V. All rights reserved.