The effects of gamma irradiation on electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure

Salari M. A., GÜZELDİR B., SAĞLAM M.

33rd International Physics Congress of the Turkish-Physical-Society (TPS), Bodrum, Türkiye, 6 - 10 Eylül 2017, cilt.1935 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1935
  • Doi Numarası: 10.1063/1.5025974
  • Basıldığı Şehir: Bodrum
  • Basıldığı Ülke: Türkiye
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this research, we have investigated the electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure before and after Co-60 gamma (gamma)-ray source irradiation with the total dose range of 0-500 kGy at room temperature. Electrical measurements of this structure have been performed using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Experimental results show that the values of the ideality factor obtained from I-V measurements increased and the values of the barrier height obtained from reverse-bias C-V measurements decreased after gamma-irradiation. The results show that the main effect of the radiation is the generation of laterally inhomogeneous defects near the semiconductor surface.